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Figures of the Article
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(a) Schematic illustration of ALD decoration process. (b) Overview of the TEM image of GaN@TiO2 nanowire (scale bar, 100 nm). (c) Selected-area TEM image of GaN@TiO2 nanowire (scale bar, 10 nm). (d) STEM image of GaN@TiO2 nanowire (scale bar, 100 nm). (e) EDS line profiles of Ga, N, Ti, and O across the GaN@TiO2 nanowire. (f) Top-view SEM images of GaN nanowires (top; scale bar, 500 nm) and GaN@TiO2 nanowires (middle; scale bar, 500 nm), and side-view SEM image of GaN@TiO2 nanowires (bottom; scale bar, 500 nm).
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(a) Schematic illustration of the operation of the GaN@TiO2-nanowire-based PEC UV-PDs under UV light irradiation. (b) Bare GaN nanowire surface in which photocorrosion predominates. (c) GaN coated with TiO2 layer, where photogenerated holes can oxidize OH− to O2.
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(a) J-t characteristics of GaN-nanowire-based PEC UV-PDs under 365 nm irradiation. (b) Representation of the rise time and decay time interval of GaN-nanowire-based PEC UV-PDs. (c) GaN@TiO2-nanowire-based PEC UV-PDs under 365 nm irradiation. (d) Representation of the rise time and decay time interval of GaN@TiO2-nanowire-based PEC UV-PDs.
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Photoelectrochemical impedance spectra of (a) GaN-nanowire-based and (b) GaN@TiO2-nanowire-based PEC UV-PDs under 365 nm irradiation.
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