ISSN 0253-2778

CN 34-1054/N

open

A two dimensional semi-analytical model of sub-threshold surface potential analysis for fully depleted SOI MOSFET

  • Based on the principle of the SOI MOSFT, a definite solution of potential is proposed by introducing three rectangular sources in the oxide layer, depletion layer and buried oxide layer. The potential distribution of the three region has been obtained by means of the variables separation method, Fourier expansion method and the integral method. The solution is a special function of the infinite series expressions. The simulation results show that the proposed semi-analytical model has high precision and smaller calculation and can be applied to circuit simulation programs.
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