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Growth and characterization of Gd2O3 thin film on Si

  • 1.

    National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

  • 2.

    School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230029, China

  • 3.

    Department of Physics, University of Science and Technology of China, Hefei 230026, China

Cite this:
https://doi.org/10.3969/j.issn.0253-2778.2011.10.004
More Information
  • Author Bio:

    LI Tingting, female, born in 1983, master. Research field: high-k gate dielectric film. E-mail: tingli@mail.ustc.edu.cn

  • Corresponding author: QI Zeming
  • Received Date: 24 January 2010
  • Rev Recd Date: 05 May 2010
  • Publish Date: 31 October 2011
    Abstract

  • Abstract

    Gd2O3 thin films were deposited on Si (100) substrates by pulsed laser deposition (PLD). The structure, composition and band offset were investigated by X-ray diffraction (XRD), X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). The results show that, the Gd2O3 thin film is amorphous when growing at 300 ℃ and is crystallized into monoclinic structure at 650 ℃. The formation of Gd-silicate interfacial layer due to interface reaction is confirmed by XRR and XPS. The valence band offset (ΔEV) of (-228±01)eV is obtained by XPS.

    Abstract

    Gd2O3 thin films were deposited on Si (100) substrates by pulsed laser deposition (PLD). The structure, composition and band offset were investigated by X-ray diffraction (XRD), X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). The results show that, the Gd2O3 thin film is amorphous when growing at 300 ℃ and is crystallized into monoclinic structure at 650 ℃. The formation of Gd-silicate interfacial layer due to interface reaction is confirmed by XRR and XPS. The valence band offset (ΔEV) of (-228±01)eV is obtained by XPS.
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