Abstract
Transparent and conductive ZnO:Al (AZO for short) films with resistivity of order of 10-3Ω·cm and visible lights transmittance >85% were prepared by an industrialized mid-frequency dual-targets magnetron sputtering coater (RAS-1100C) using AZO ceramic targets with Al2O3 content of 27% (mass fraction). Influences of baking temperature, argon flow rate and sputtering power on the electrical properties of the deposited AZO films were analyzed. Meanwhile, differences in the resistivity of AZO films deposited on those substrates fixed in different regions in front of the targets were also studied. Results show that the resistivity of AZO films deposited facing the erosion areas of the targets is on the order of 10-2 Ω·cm while resistivity of samples deposited facing the middle area between the two targets is around 5×10-4Ω·cm, which indicates that the properties of AZO films deposited on the cylindrical substrate holder of RAS exhibit an average mixing result of films deposited in different regions. The key issues for improving the properties of the deposited AZO films depend on the suppression of bombarding implantation effect, which was caused by energetic oxygen ions, and the enhancement of crystallinity of the deposited films.
Abstract
Transparent and conductive ZnO:Al (AZO for short) films with resistivity of order of 10-3Ω·cm and visible lights transmittance >85% were prepared by an industrialized mid-frequency dual-targets magnetron sputtering coater (RAS-1100C) using AZO ceramic targets with Al2O3 content of 27% (mass fraction). Influences of baking temperature, argon flow rate and sputtering power on the electrical properties of the deposited AZO films were analyzed. Meanwhile, differences in the resistivity of AZO films deposited on those substrates fixed in different regions in front of the targets were also studied. Results show that the resistivity of AZO films deposited facing the erosion areas of the targets is on the order of 10-2 Ω·cm while resistivity of samples deposited facing the middle area between the two targets is around 5×10-4Ω·cm, which indicates that the properties of AZO films deposited on the cylindrical substrate holder of RAS exhibit an average mixing result of films deposited in different regions. The key issues for improving the properties of the deposited AZO films depend on the suppression of bombarding implantation effect, which was caused by energetic oxygen ions, and the enhancement of crystallinity of the deposited films.
Open Access
JUSTC
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