ISSN 0253-2778

CN 34-1054/N

open
Free to Publish. Free to Read.
Open AccessOpen Access JUSTC Original Paper

Modulation of graphene carrier density by a mixed doping route

  • Department of Physics, University of Science and Technology of China, Hefei 230026, China

Cite this:
https://doi.org/10.3969/j.issn.0253-2778.2020.06.017
  • Received Date: 22 March 2020
  • Accepted Date: 16 May 2020
  • Rev Recd Date: 16 May 2020
  • Publish Date: 30 June 2020
    Abstract

  • Abstract

    Graphene has a significant advantage that its carrier density can be easily tuned. Various methods for controlling carrier density have been proposed, of which gate tuning is the most widely used. However, in practical applications, gate tuning also has some limitations. For example, some designed circuits and test instruments cannot stand high voltages over hundreds or even tens of volts. Recently, a method of doping with electron beam irradiation has appeared, which can change graphene carrier density locally and continuously, but the tuning range is small. Here a new mixed doping route combining HNO3 doping and electron beam irradiation was presented, which shows greater ability to tune carrier density continuously in a larger range. By analyzing the results of the scanning near-field optical microscope and electrical transport, it was found that the mixed doping route adjusts the graphene carrier density from 2.15×103 cm-2 to -1.49×102 cm-2,which is equivalent in tuning effect to 320 V for gate tuning of the 300 nm silicon dioxide.In addition, graphene can be written into pre-designed electric patterns via electron beam irradiation, which is potentially widely applicable.

    Abstract

    Graphene has a significant advantage that its carrier density can be easily tuned. Various methods for controlling carrier density have been proposed, of which gate tuning is the most widely used. However, in practical applications, gate tuning also has some limitations. For example, some designed circuits and test instruments cannot stand high voltages over hundreds or even tens of volts. Recently, a method of doping with electron beam irradiation has appeared, which can change graphene carrier density locally and continuously, but the tuning range is small. Here a new mixed doping route combining HNO3 doping and electron beam irradiation was presented, which shows greater ability to tune carrier density continuously in a larger range. By analyzing the results of the scanning near-field optical microscope and electrical transport, it was found that the mixed doping route adjusts the graphene carrier density from 2.15×103 cm-2 to -1.49×102 cm-2,which is equivalent in tuning effect to 320 V for gate tuning of the 300 nm silicon dioxide.In addition, graphene can be written into pre-designed electric patterns via electron beam irradiation, which is potentially widely applicable.
    • FullText(HTML)
  • loading
    • References(20)
  • [1]
    NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Two-dimensional gas of massless Dirac fermions in graphene[J].Nature, 2005, 438(7065): 197-200.
    [2]
    WANG D, FAN X, LI X, et al. Quantum control of graphene plasmon excitation and propagation at heaviside potential steps[J]. Nano Letters, 2018, 18(2): 1373-1378.
    [3]
    CAO Y, FATEMI V, FANG S, et al. Unconventional superconductivity in magic-angle graphene superlattices[J]. Nature, 2018, 556(7699): 43-50.
    [4]
    NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Electric field effect in atomically thin carbon films[J]. Science, 2004, 306(5696): 666-669.
    [5]
    ZHENG Z, WANG W, MA T, et al. Chemically-doped graphene with improved surface plasmon characteristics:An optical near-field study[J]. Nanoscale, 2016, 8(37): 16621-16630.
    [6]
    GENG H Z, KIM K K, SO K P, et al. Effect of acid treatment on carbon nanotube-based flexible transparent conducting films[J]. Journal of the American Chemical Society, 2007, 129(25): 7758-7759.
    [7]
    DAS S, SUDHAGAR P, ITO E, et al. Effect of HNO3 functionalization on large scale graphene for enhanced tri-iodide reduction in dye-sensitized solar cells[J]. Journal of Materials Chemistry, 2012, 22(38): 20490-20497.
    [8]
    DMITRI K, PHILIP KIM. Controlling electron-phonon interactions in graphene at ultrahigh carrier densities[J]. Physical Review Letters 2010, 105(25): 256805.
    [9]
    YE J, CRACIUN M F, KOSHINO M, et al. Accessing the transport properties of graphene and its multilayers at high carrier density[J]. Proceedings of the National Academy of Sciences, 2011, 108(32): 13002-13006.
    [10]
    VAKIL A, ENGHETA N. Transformation optics using graphene[J]. Science, 2011, 332(6035): 1291-1294.
    [11]
    ZHOU Y, JADWISZCZAK J, KEANE D, et al.Programmable graphene doping via electron beam irradiation[J]. Nanoscale, 2017, 9(25): 8657-8664.
    [12]
    YU X, SHEN Y, LIU T, et al. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation[J]. Scientific Reports, 2015(5): 12014.
    [13]
    LIU G, DESALEGNE T,BALANDIN A A. Tuning of graphene properties via controlled exposure to electron beams[J]. IEEE Transactions on Nanotechnology, 2010, 10(4): 865-870.
    [14]
    CHILDRES I,JAUREGUI L A, FOXE M, et al. Effect of electron-beam irradiation on graphene field effect devices[J]. Applied Physics Letters, 2010, 97(17): 173109.
    [15]
    KOMSA H P,KOTAKOSKI J, KURASCH S, et al. Two-dimensional transition metal dichalcogenides under electron irradiation: Defect production and doping[J]. Physical Review Letters, 2012, 109(3): 035503.
    [16]
    XIONG L, FORSYTHE C, JUNG M, et al. Photonic crystal for graphene plasmons[J]. Nature Communications, 2019, 10(1): 1-6.
    [17]
    YUN J, WEI B L, HONG J X, et al. A planar electromagnetic “black hole” based on graphene[J]. Physics Letters A, 2012, 376(17): 1468-1471.
    [18]
    WITHERS F, BOINTON T H, DUBOIS M, et al. Nanopatterning of fluorinated graphene by electron beam irradiation[J]. Nano Letters, 2011, 11(9): 3912-3916.
    [19]
    CHEN J, BADIOLI M, ALONSO-GONZLEZ P, et al. Optical nano-imaging of gate-tunable graphene plasmons[J]. Nature, 2012, 487(7405): 77-81.
    [20]
    HONG J X, WEI B L, YUN J, et al. Beam-scanning planar lens based on graphene[J]. Applied Physics Letters, 2012, 100(5): 051903.)
    • Supplements(0)
    • Related Articles
    • Track Citations
  • 加载中

Catalog

    |
    Get Citation
    PDF
    XML
    [1]
    NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Two-dimensional gas of massless Dirac fermions in graphene[J].Nature, 2005, 438(7065): 197-200.
    [2]
    WANG D, FAN X, LI X, et al. Quantum control of graphene plasmon excitation and propagation at heaviside potential steps[J]. Nano Letters, 2018, 18(2): 1373-1378.
    [3]
    CAO Y, FATEMI V, FANG S, et al. Unconventional superconductivity in magic-angle graphene superlattices[J]. Nature, 2018, 556(7699): 43-50.
    [4]
    NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Electric field effect in atomically thin carbon films[J]. Science, 2004, 306(5696): 666-669.
    [5]
    ZHENG Z, WANG W, MA T, et al. Chemically-doped graphene with improved surface plasmon characteristics:An optical near-field study[J]. Nanoscale, 2016, 8(37): 16621-16630.
    [6]
    GENG H Z, KIM K K, SO K P, et al. Effect of acid treatment on carbon nanotube-based flexible transparent conducting films[J]. Journal of the American Chemical Society, 2007, 129(25): 7758-7759.
    [7]
    DAS S, SUDHAGAR P, ITO E, et al. Effect of HNO3 functionalization on large scale graphene for enhanced tri-iodide reduction in dye-sensitized solar cells[J]. Journal of Materials Chemistry, 2012, 22(38): 20490-20497.
    [8]
    DMITRI K, PHILIP KIM. Controlling electron-phonon interactions in graphene at ultrahigh carrier densities[J]. Physical Review Letters 2010, 105(25): 256805.
    [9]
    YE J, CRACIUN M F, KOSHINO M, et al. Accessing the transport properties of graphene and its multilayers at high carrier density[J]. Proceedings of the National Academy of Sciences, 2011, 108(32): 13002-13006.
    [10]
    VAKIL A, ENGHETA N. Transformation optics using graphene[J]. Science, 2011, 332(6035): 1291-1294.
    [11]
    ZHOU Y, JADWISZCZAK J, KEANE D, et al.Programmable graphene doping via electron beam irradiation[J]. Nanoscale, 2017, 9(25): 8657-8664.
    [12]
    YU X, SHEN Y, LIU T, et al. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation[J]. Scientific Reports, 2015(5): 12014.
    [13]
    LIU G, DESALEGNE T,BALANDIN A A. Tuning of graphene properties via controlled exposure to electron beams[J]. IEEE Transactions on Nanotechnology, 2010, 10(4): 865-870.
    [14]
    CHILDRES I,JAUREGUI L A, FOXE M, et al. Effect of electron-beam irradiation on graphene field effect devices[J]. Applied Physics Letters, 2010, 97(17): 173109.
    [15]
    KOMSA H P,KOTAKOSKI J, KURASCH S, et al. Two-dimensional transition metal dichalcogenides under electron irradiation: Defect production and doping[J]. Physical Review Letters, 2012, 109(3): 035503.
    [16]
    XIONG L, FORSYTHE C, JUNG M, et al. Photonic crystal for graphene plasmons[J]. Nature Communications, 2019, 10(1): 1-6.
    [17]
    YUN J, WEI B L, HONG J X, et al. A planar electromagnetic “black hole” based on graphene[J]. Physics Letters A, 2012, 376(17): 1468-1471.
    [18]
    WITHERS F, BOINTON T H, DUBOIS M, et al. Nanopatterning of fluorinated graphene by electron beam irradiation[J]. Nano Letters, 2011, 11(9): 3912-3916.
    [19]
    CHEN J, BADIOLI M, ALONSO-GONZLEZ P, et al. Optical nano-imaging of gate-tunable graphene plasmons[J]. Nature, 2012, 487(7405): 77-81.
    [20]
    HONG J X, WEI B L, YUN J, et al. Beam-scanning planar lens based on graphene[J]. Applied Physics Letters, 2012, 100(5): 051903.)
    Recommended articles
    TrendMD
    Volume 50 Issue 6 page: 839-843
    Cover

    Article Metrics

    Article views (26) PDF downloads(217)
    Proportional views

    Copyright © Editorial Office of JUSTC, All Rights Reserved. 皖ICP备05002528号

    Supported by: Beijing Renhe Information Technology Co. Ltd    

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return