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Open AccessOpen Access JUSTC Physics 12 October 2024

Freestanding oxide membranes: synthesis, tunable physical properties, and functional devices

  • Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China

Cite this:
CSTR: 32290.14.JUSTC-2023-0103
https://doi.org/10.52396/JUSTC-2023-0103
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  • Author Bio:

    Ao Wang is a graduate student at the Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China. He received his B.S. degree from Nankai University in 2022. His research mainly focuses on the preparation and characterization of freestanding oxide films

    Jinfeng Zhang is currently working as a postdoctor at the Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China (USTC). She received Ph.D. degree from USTC in 2024. Her research mainly focuses freestanding oxide films and flexible electronics based on functional oxides

    Lingfei Wang is a Professor at the Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China (USTC). He received his Ph.D. degree in Condensed-matter Physics from USTC in 2013. From 2013 to 2015, he worked as a postdoctoral research associate at the King Abdullah University of Science and Technology, Saudi Arabia. From 2015 to 2020, he worked as a postdoctoral research associate and an assistant research professor at Seoul National University, Seoul. In 2020, he joined USTC as a professor. His research mainly focuses on exploring the emergent interfacial phenomena at the interfaces of correlated oxide heterostructures and developing oxide-based functional devices

  • Corresponding author: E-mail: zjinfeng@mail.ustc.edu.cn; E-mail: wanglf@ustc.edu.cn
  • Received Date: 01 July 2023
  • Accepted Date: 28 November 2023
    • Available Online: 12 October 2024
    Abstract

  • Abstract

    The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping, which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide systems. Recently, however, the development of freestanding oxide membranes has provided a plausible solution to these substrate limitations. Single-crystalline functional oxide films can be released from their substrates without incurring significant damage and can subsequently be transferred to any substrate of choice. This paper discusses recent advancements in the fabrication, adjustable physical properties, and various applications of freestanding oxide perovskite films. First, we present the primary strategies employed for the synthesis and transfer of these freestanding perovskite thin films. Second, we explore the main functionalities observed in freestanding perovskite oxide thin films, with special attention tothe tunable functionalities and physical properties of these freestanding perovskite membranes under varying strain states. Next, we encapsulate three representative devices based on freestanding oxide films. Overall, this review highlights the potential of freestanding oxide films for the study of novel functionalities and flexible electronics.

    Graphical abstract

    Schematic for the preparation process of freestanding oxide films, along with examples of physical properties research and device applications.

    Abstract

    The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping, which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide systems. Recently, however, the development of freestanding oxide membranes has provided a plausible solution to these substrate limitations. Single-crystalline functional oxide films can be released from their substrates without incurring significant damage and can subsequently be transferred to any substrate of choice. This paper discusses recent advancements in the fabrication, adjustable physical properties, and various applications of freestanding oxide perovskite films. First, we present the primary strategies employed for the synthesis and transfer of these freestanding perovskite thin films. Second, we explore the main functionalities observed in freestanding perovskite oxide thin films, with special attention tothe tunable functionalities and physical properties of these freestanding perovskite membranes under varying strain states. Next, we encapsulate three representative devices based on freestanding oxide films. Overall, this review highlights the potential of freestanding oxide films for the study of novel functionalities and flexible electronics.

    • Public Summary

    • The preparation methods of freestanding films, as well as the advantages and disadvantages of various methods, are summarized.
    • The research on the properties and devices of freestanding oxide films is presented.
    • This review provides insights into the future development of freestanding oxide films.

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    • References(104)
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    Figure  1.  (a) Structural unit of mica. Surface structure of muscovite mica: (b) (001) projection and (c) (100) projection. Reproduced with permission from Ref. [34]. Copyright 2017, Elsevier. (d) Summary of vdW oxide heteroepitaxy. Reproduced with permission from Ref. [37]. Copyright 2017, Springer Nature.

    Figure  2.  (a) Process schematic for oxide membrane release and transfer. Reproduced with permission from Ref. [71]. Copyright 2019, Springer Nature. (b) Cubic lattice structure of SAO and Al6O1818− rings consisting of AlO4 tetrahedra. Reproduced with permission from Ref. [22]. Copyright 2016, Springer Nature. (c) (Top) Top 1/4 of the SAO unit cell projected onto the (001) plane, dashed circles indicate vacancy sites, and 4×4 unit cells of the STO crystal structure projected onto the (001) plane. Reproduced with permission from Ref. [22]. Copyright 2016, Springer Nature. (Bottom) Schematic illustrating the pseudocubic unit cell of SAO. Reproduced with permission from Ref. [61]. Copyright 2017, American Institute of Physics.

    Figure  3.  Schematics of four different wet-etching-based methods for fabricating oxide films. Reproduced with permission from Ref. [68]. Copyright 2021, Springer Nature.