Abstract: ZnO films were prepared on Si(100) substrates by ultrasonic spray pyrolysis technique. The effect of growth temperature, spray rate and Ag doping on the emission property of ZnO films was studied. Results show that appropriate growth temperature and spray rate could lead to the good quality, excellent photoluminescence property and high PL intensity ratio (R) of the UV emission to the deep-level emission. Among undoped ZnO films, the sample deposited at 500 ℃ with a spray rate of 015 mL/min has the strongest near-band edge (NBE) ultraviolet emission, with the largest R of 470. Ag doping (with the Ag:Zn atomic ratio=3%) could enhance the UV emission of ZnO films, with the R increasing to at least 700. But excessively high concentration of Ag dopant may degrade the UV luminescence property.