氢气气氛中后续退火处理对ZnO:Al 薄膜光电性能的影响

Effects of post-annealing in hydrogen atmosphere on the properties of Al-doped ZnO films

摘要: 利用自由基辅助磁控溅射法在载玻片衬底上制备了透明导电ZnO:Al薄膜(简称AZO薄膜).研究了氢气气氛中后续退火处理对Al掺杂效率以及AZO薄膜性能的影响.研究结果表明，退火处理提高Al的掺杂效率、降低中性杂质浓度，从而提高了AZO薄膜的导电性能.AZO薄膜550 ℃下在H2气氛中退火处理后，其电阻率为65×10-4 Ω·cm，550 nm波长的透射率为857%，载流子浓度为33×1020 cm-3，迁移率为297 cm2·V-1·s-1.

Abstract: Transparent conductive ZnO:Al (AZO) films were deposited on glass substrates by radical assisted magnetron sputtering. The effects of post-annealing in hydrogen atmosphere on the Al doping efficiency and properties of AZO films were investigated. It was found that post-annealing treatment improves the Al doping efficiency and reduces the concentration of neutral impurity scattering centers. These two factors together improve the conductivity of AZO films. The resistivity and the transmittance at 550 nm of the AZO films annealed in H2 at 550 ℃ were 65×10-4 Ω·cm and 857%, respectively, with carrier concentration being 33×1020 cm-3 and mobility of 297 cm2·V-1·s-1.