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工艺参数对磁控溅射制备ZnO:Al薄膜 性能的影响及分析

Influence of sputtering parameters on the properties of ZnO:Al films prepared by magnetron sputtering

  • 摘要: 采用Al2O3质量分数为27%的ZnO:Al (简称AZO)陶瓷靶在RAS-1100C大型中频孪生靶磁控溅射镀膜设备上溅射制备了电阻率在10-3 Ω·cm量级、可见光透过率>85%的AZO透明导电薄膜.分析了烘烤温度、氩气流速和溅射功率对薄膜电学性能的影响,同时还对固定在靶材前方不同区域处的衬底上沉积得到的AZO薄膜的电阻率差异进行了研究.实验发现靶材刻蚀沟道正前方处沉积的AZO薄膜的电阻率在10-2 Ω·cm量级,而两块靶材中间非溅射区域正前方处所沉积的AZO薄膜的电阻率则在5×10-4 Ω·cm左右.此研究结果表明沉积在RAS夹具圆筒上的AZO薄膜的性能是靶前各区域溅射沉积薄膜的性能的混合平均.进一步提高RAS溅射制备的AZO薄膜的性能的关键在于抑制高能氧负离子的轰击注入效应以及提高薄膜的结晶性能.

     

    Abstract: Transparent and conductive ZnO:Al (AZO for short) films with resistivity of order of 10-3Ω·cm and visible lights transmittance >85% were prepared by an industrialized mid-frequency dual-targets magnetron sputtering coater (RAS-1100C) using AZO ceramic targets with Al2O3 content of 27% (mass fraction). Influences of baking temperature, argon flow rate and sputtering power on the electrical properties of the deposited AZO films were analyzed. Meanwhile, differences in the resistivity of AZO films deposited on those substrates fixed in different regions in front of the targets were also studied. Results show that the resistivity of AZO films deposited facing the erosion areas of the targets is on the order of 10-2 Ω·cm while resistivity of samples deposited facing the middle area between the two targets is around 5×10-4Ω·cm, which indicates that the properties of AZO films deposited on the cylindrical substrate holder of RAS exhibit an average mixing result of films deposited in different regions. The key issues for improving the properties of the deposited AZO films depend on the suppression of bombarding implantation effect, which was caused by energetic oxygen ions, and the enhancement of crystallinity of the deposited films.

     

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