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碲协助法制备二维过渡金属硫属化合物合金及异质结

Tellurium-assisted synthesis of two-dimensional transition metal dichalcogenide heterostructure and alloy

  • 摘要: 二维过渡金属硫属化合物(TMDC)合金和异质结由于具有独特的光电性能,因而在下一代光电器件中有着广泛的应用前景.然而,如何可控地制备出二维TMDC合金和异质结是一个重大的挑战.以WS2与MoS2的异质结和合金为例,通过在钨粉中引入不同含量的低熔点碲粉,有效降低了WS2的生长温度,继而调节了WS2的成核和生长速率,利用一步化学气相沉积方法,可控地制备出WS2/MoS2垂直异质结和Mo1-xWxS2合金.拉曼光谱、光致发光谱、拉曼成像和光致发光成像技术表明,制备出的WS2/MoS2垂直异质结是由单层的WS2和MoS2上下叠加而成,而在Mo1-xWxS2合金中,W的含量(x)为0.83.此研究为人们提供了一个简单、有效的可控制备二维TMDC异质结和合金的化学气相沉积方法.

     

    Abstract: Two-dimensional (2D) transition metal dichalcogenide (TMDC) alloys and heterostructures have a great potential in next generation optoelectronic devices due to their unique optoelectronic properties. However, controllable synthesis of 2D TMDC remains a major challenge. Taking the heterostructure and alloy of WS2and MoS2as examples, we introduce various contents of low melting point Tellurium powder to effectively reduce the growth temperature of WS2, and then regulate the nucleation and growth rate of WS2. Then the WS2/MoS2vertical heterostructure and the Mo1-xWxS2alloy could be controllably synthesized by a one-step chemical vapor deposition method. Raman and photoluminescence spectra and mapping show that the prepared WS2/MoS2vertical heterostructure is formed by superimposing monolayer WS2and monolayer MoS2. The content of W (x) is 0.83 in the as-synthesized Mo1-xWxS2alloy. This work provides a simple and effective method for two-dimensional TMDC heterostructures and alloys.

     

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