The patterning of microplasma reactor electrode using sputtering image reversal lift-off process

The image reversal lift-off process, which is used to pattern the microplasma reactor electrode, is studied. Nickel film is deposited by sputtering and then formed on electrodes using lift-off process based on AR-U4030 photoresist. The effects of reversal bake and develop time on the pattern quality of the photoresist are analysed. Furthermore, the influence of the sputtering power, time and ultrasonic cleaning on the lift-off process are investigated. The thickness of Ni obtained here achieved more than 200 nm and the image resolution is higher than 2 μm.Finally, the inverted square pyramid microplasma reactor is fabricated using this lift-off process, and the electrical characteristic of the reactor operating stably in SF6 is presented.